CMT4953G
CMT4953G is P-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Champion Microelectronic.
DESCRIPTION
The CMT4953G provide the designer with the best bination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all mercial-industrial mount applications and suited for low voltage applications such as DC/DC converters.
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FEATURES
Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM SO-8 Package Design
APPLICATIONS
Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
PIN CONFIGURATION
8-PIN SOP (S08)
SYMBOL
Top View
P-Channel MOSFET
ORDERING INFORMATION
Part Number CMT4953G Package SOP-8
- Note: G : Suffix for Pb Free Product
2007/03/01 Rev1.0
Champion Microelectronic Corporation
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P-CHANNEL ENHANCEMENT MODE MOSFET
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ABSOLUTE MAXIMUM RATINGS
Rating Drain- Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol VDS VGS TA=25℃ ID IDM TA=25℃ PD TJ TSTG
Value -30 ±20 -4.5 -23 2 -55 to150 -55 to 150 0.02
Unit V V A A W ℃ ℃ ℃/W ℃/W
Total Power Dissipation
Operating Junction Temperature Range Storage Temperature Range Linear Derating Factor Thermal Resistance Junction-ambient (Max)
Rthj-amb
2007/03/01 Rev1.0
Champion Microelectronic Corporation
Page
P-CHANNEL ENHANCEMENT MODE MOSFET ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃. (unless otherwise specified)
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Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistancem Gate Threshold Voltage Forward Transconductance
2...
